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ZXMHC6A07T8
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current@V GS =10V; T A =25 C (b)(d)
@V GS =10V; T A =70 C (b)(d)
@V GS =10V; T A =25 C (a)(d)
Pulsed Drain Current (c)
SYMBOL
V DSS
V GS
I D
I DM
N-Channel
60
20
1.8
1.4
1.6
8.4
P-Channel
-60
20
-1.5
-1.2
-1.3
-7.2
UNIT
V
V
A
A
A
Continuous Source Current (Body Diode)
Pulsed Source Current (Body Diode) (c)
(b)
I S
I SM
2.3
8.4
-2.1
-7.2
A
A
Power Dissipation at T A =25°C (a)(d)
Linear Derating Factor
Power Dissipation at T A =25°C (b)(d)
Linear Derating Factor
Operating and Storage Temperature Range
P D
P D
T j :T stg
1.3
10.4
1.7
13.6
-55 to +150
W
mW/°C
W
mW/°C
°C
THERMAL RESISTANCE
PARAMETER
SYMBOL
VALUE
UNIT
Junction to Ambient
Junction to Ambient
(a)(d)
(b)(d)
R θ JA
R θ JA
94.5
73.3
°C/W
°C/W
Notes:
(a) For a device surface mounted on 50mm x 50mm x 1.6mm FR4 PCB with high coverage of single sided 2oz copper, in still air conditions with
the heatsink split into two equal areas, one for each drain connection.
(b) For a device surface mounted on FR4 PCB measured 1.6mm at t ≤ 10sec.
(c) Repetitive rating - 50mm x 50mm x 1.6mm FR4 PCB, D = 0.02, pulse width 300 s pulse width limited by maximum junction temperature. Refer
to Transient Thermal Impedance graph.
(d) For device with one active die.
ISSUE 2 - MAY 2005
2
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